发明名称 |
Method of adjusting a threshold voltage for a semiconductor device fabricated on a semiconductor on insulator substrate |
摘要 |
A method of adjusting a threshold voltage for a semiconductor device on a semiconductor on insulator substrate includes performing a threshold voltage adjustment implant (25) after formation of a gate structure (16) to reduce the diffusion of implanted dopant (26). Reducing dopant diffusion eliminates the narrow channel effect which degrades device performance. Implanting the dopant (26) after formation of the gate structure (16) simplifies processing of semiconductor device (28) by eliminating a photolithography step which is accomplished by utilizing photoresist (21) used for a source and drain implant (22).
|
申请公布号 |
US5532175(A) |
申请公布日期 |
1996.07.02 |
申请号 |
US19950423614 |
申请日期 |
1995.04.17 |
申请人 |
MOTOROLA, INC. |
发明人 |
RACANELLI, MARCO;HWANG, BOR-YUAN C.;FOERSTNER, JUERGEN;HUANG, WEN-LING M. |
分类号 |
H01L27/092;H01L21/265;H01L21/336;H01L21/8238;H01L27/00;H01L29/786;(IPC1-7):H01L21/336;H01L21/335 |
主分类号 |
H01L27/092 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|