发明名称 PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: To prevent the characteristic deterioration of a semiconductor device accompanying misalignment and solve problems concerning micro-fabrication and increase in production steps by utilizing a positional information of a first range specifying layer for a second range specifying layer and a positional information of another range specifying layer other than a range specifying layer in an x direction for a y direction of a third range specifying layer. CONSTITUTION: When a first range specifying layer 1 where the longer side thereof is in an x direction, second range specifying layer 2 where the longer side of a range specifying layer is in a y direction, and range specifying layer are subjected to interlayer alignment therein, the layer 2 is aligned using the positional information of the layer 1 and the x direction of the layer 3 is also aligned using the positional information of the layer 2, further the y direction of the layer 3 is aligned using the positional information of the layer 1. In addition, the alignment of rotation of the layer is performed using either of positional informations of the layers 1 and 2.
申请公布号 JPH08172042(A) 申请公布日期 1996.07.02
申请号 JP19940316294 申请日期 1994.12.20
申请人 HITACHI LTD 发明人 OYU SHIZUNORI;HASEGAWA NORIO;KAWAMOTO YOSHIFUMI;OKURA OSAMU
分类号 G03F9/00;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F9/00
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