| 摘要 |
PURPOSE: To suppress the void production in a tungsten plug in order to form the tungsten plug in a hole of an interlayer insulating film by blanket tungsten CVD process. CONSTITUTION: An aperture part 15a is formed in a photoresist film 15 by ordinary exposure method by chlorine base dry etching step using said film 15 as a mask and then a TiN 14 is selectively and iso-tropically etched away so as to make the aperture part diameter of the TiN film 14 retreat from the aperture part diameter of said resist film 14 by 500Å. Next, anisotropical dry etching step is performed using the photoresist film 15 as a mask to form an interlayer insulating film 13 in the hole 13a in the same diameter as that of the aperture part 15a of the film 15. Next, a plug comprising a W layer 16 is formed in the hole 13. At this time, since the TiN film 14 to be the core of growing the N layer is made retreat from the hole 13a, the W layer growing in the aperture part end of the hole 13a is delayed to suppress the void production in the W layer 16 thereby enabling the high reliable plug to be formed in the hole.
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