| 摘要 |
PURPOSE: To form a doped silicon thin film having a smooth surface. CONSTITUTION: The title semiconductor device is provided with a dielectric thin film 102 formed on the surface of a trench, a first amorphous silicon thin film 104 formed on the dielectric thin film, a dopant thin film 106, a second amorphous silicon thin film 110, and a capping thin film 108 which is formed between the dopant thin film and one out of the first and the second amorphous silicon thin films. The dopant thin film 106 is formed between the other out of the first and the second amorphous silicon thin films 104, 110 and the capping thin film 108. The capping thin film 108 is formed of one out of a silicon oxide film and a silicon nitride film. |
