| 摘要 |
PURPOSE: To form an electrode or a wire capable of flowing a large current in a simple device containing no complicated and expensive mechanisms for rotation, revolution, etc., in an element having an undercut on a surface like a semiconductor laser. CONSTITUTION: A semiconductor laser is formed on a substrate with a striped active layer 10, an electrode 12 being an ohmic contact that a current is implanted thereon, a lead-out electrode 13 for connecting therewith, a bonding pad part 14 of the lead-out electrode and a wire part for connecting the electrode 13 therewith. A groove is bored on both sides of stripe and the side surfaces are coated with an insulation film and an injected current is confined. Next, with the use of an electron beam evaporator having high orientation, an electrode and a wire portion are formed by a simple method of irradiating metal particles from upward or aslant upward. At that time, portions that are desired to electrically connect on an element surface are connected between the electrodes on a forward mesa inclined surface so as to see an evaporation source, and portions to be separated are screened for the evaporation source on a reverse mesa inclined surface, make a structure for separation or a connection in self-alignment. |
