| 摘要 |
<p>PURPOSE: To prevent a boron deposit or a phosphorus deposit from being formed on the surface of a glass film and to reduce a reflow temperature by a method wherein after the glass film containing at least one side of boron and phosphorus is deposited on a wafer, the glass film is flattened and the whole surface of the glass film is covered with an insulating film. CONSTITUTION: A glass film 16 is deposited on the whole surface of a wafer 10. That is, a boron phosphosilicate glass(BPSG) film 16 containing 9.0wt.% or more of the total concentration of a boron concentration and a phosphorus concentration is deposited. Then, after the film 16 is reflowed and is flattened, an insulating film 18 is applied on the whole surface of this film 16. Here after the wafer 10 deposited with the BPSG film 16 is arranged in a device, the interior of the device is reflowed at a temperature of 800 deg.C or higher in a nitrogen gas atmosphere to flatten the surface of the BPSG film 16 and the film 18 of a film thickness of 50Åor thicker is applied on the whole surface of the glass film at a temperature of 600 deg.C or higher.</p> |
