| 摘要 |
PURPOSE: To form an active layer in which strain is sufficiently large and which has a strained quantum well layer having sufficient thickness by lowering the growing temperature of the active layer lower than that of a clad layer. CONSTITUTION: An active layer 4, a lattice-matched clad layers 2, 6 and light confinement layers 3, 5 are sequentially epitaxially grown in this order to be laminated on a substrate 1. The layer 4 has a quantum well layer 4a having a compression strain and a lattice-matched barrier layer 4b. The growing conditions are that the layers 2, 6, the light confinement layers 3, 5 and the layer 7 are grown at the upper limit temperature at which the epitaxial growth cannot be conducted by the isolation of In and the layer 4 is grown at the lower temperature than that. Thus, the growing temperature is lowered to use more number of the quantum wells as the active layer. Accordingly, the confinement amount depending upon the thickness of the layer is raised, and the carrier density is reduced, and hence the light emitting efficiency is raised as the whole. |
