| 摘要 |
PROBLEM TO BE SOLVED: To increase the capacitance of a capacitor by forming a cylindrical storage electrode having a large number of irregular side walls above a semiconductor substrate. SOLUTION: A first conductive layer 7 is formed to be connected through a contact hoel 10 with a substrate 1 and then first, second and third sacrifice films 9, 11, 13 are deposited and etched followed by side face etching of the second sacrifice film 11. Subsequently, a second conductive layer 15 is formed and etched to form a second conductive layer spacer. Thereafter, an oxide is deposited thereon and etched thus forming an oxide spacer and a first conductive layer pattern. A conductive layer spacer is also formed and the first, second and third sacrifice films 9, 11, 13 being exposed are removed, along with the oxide spacer, by a wet method thus forming a cylindrical storage electrode having a large number of irregular side walls. With such structure, the surface area of the storage electrode is enlarged and the capacitance of the capacitor is increased resulting in a high integration semiconductor element. |
