SUPER FINE CONTACT HALL FORMING METHOD

摘要

depositing a first photoresist (14) on the wafer (6) and exposing the photoresist (14) using phase-reversed mask; developing the exposed photoresist and baking a photoresist (16) which remains after the first developing; depositing a second photoresist (18) and exposing the photoresist (18) using a positive contact hole pattern mask; developing the second photoresist (18) and forming a photoresist form(21) which remains after the second developing.