CONTACT MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

forming word line which comprises a first polysilicon (2)/an oxide layer (3)/a second polysilicon (4) on the upper side of the substrate (1); forming an oxide spacer (6) and evaporating BPSG (7) flatly over the oxide layer of the word line; depositing a third polysilicon (8), forming a third polysilicon pattern (8A) by etching using a patterned photoresist (9) opened wider than a bit line contact hole (10) and a third polysilicon spacer (8B) in the side wall of the second polysilicon instantaneously; forming a bit line contact hole (10) by etching the revealed BPSG (7) and depositing a forth polysilicon (11) thickly; forming a forth polysilicon plug (12) by etchback of the forth, the third, the second polysilicon to reveal BPSG; forming bit line (16) by etching a fifth polysilicon (13) by patterning.