CONTACT FORMING MEHTOD OF SEMICONDUCTOR DEVICE

摘要

depositing a first conducting material (1) for metal wiring and forming an insulating layer (2); depositing a second conducting material (3) for etch-stop layer on the insulating layer (2); defining a contact hole region on the second conducting material (3) and removing the second conducting material where a contact hole (6) is formed by etching; removing a photoresist layer (4a) and forming an insulating layer (2'); forming a metal line hole by etching the insulating layer (2') after defining the region where the metal line is formed; forming the contact hole (6) by etching the insulating layer (2).