发明名称 CONTACT PLUG MANUFACTURING METHOD USING TUNGSTEN
摘要 The contact plug manufacturing method using tungsten comprises the steps of formating a via contact hole for exposing a first metal layer by etching a barrier layer on the first metal layer, formating a tungsten plug for filling the via contact hole by depositing tungsten after implanting the Si into the bottom part of the via hole, and contacting the first metal layer through the tungsten plug, thereby reducing a contact resistivity.
申请公布号 KR960008550(B1) 申请公布日期 1996.06.28
申请号 KR19920027092 申请日期 1992.12.31
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 CHOE, KYUNG - KEUN
分类号 H01L21/768;(IPC1-7):H01L21/28 主分类号 H01L21/768
代理机构 代理人
主权项
地址