发明名称 |
CONTACT PLUG MANUFACTURING METHOD USING TUNGSTEN |
摘要 |
The contact plug manufacturing method using tungsten comprises the steps of formating a via contact hole for exposing a first metal layer by etching a barrier layer on the first metal layer, formating a tungsten plug for filling the via contact hole by depositing tungsten after implanting the Si into the bottom part of the via hole, and contacting the first metal layer through the tungsten plug, thereby reducing a contact resistivity.
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申请公布号 |
KR960008550(B1) |
申请公布日期 |
1996.06.28 |
申请号 |
KR19920027092 |
申请日期 |
1992.12.31 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
CHOE, KYUNG - KEUN |
分类号 |
H01L21/768;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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