MANUFACTURE METHOD OF SEMICONDUCTOR MEMORY DEVICE

摘要

forming a first insulating layer on the semiconductor substrate where a transistor is formed; forming a first conducting layer (30) over the first insulating layer; forming a first epilayer (41) in uniform thickness over the first conducting layer (30); forming a second conducting layer (34) over the whole surface of the wafer after forming a buried contact (33) over a source region (27) of the transistor; removing the second conducting layer (34) except the part of the buried contact by photolithography; removing the first epilayer revealed; forming a storage electrode after baking a photoresist (35) on the second conducting layer and removing some of the first conducting layer; removing the photoresist on the storage electrode; forming a capacitor by forming a dielectric layer (36) and a plate electrode (37) over the revealed storage electrode.