loading a wafer and injecting N2 gas into the tube of LPCVD (Low Pressure Chemical Vapor Deposition); annealing after injecting N2O gas to form a gate insulating layer; injecting SiH4 gas to form a gate electrode.
申请公布号
KR960008565(B1)
申请公布日期
1996.06.28
申请号
KR19930011750
申请日期
1993.06.25
申请人
HYUNDAI ELECTRONICS CO., LTD.
发明人
JUNG, YOUNG - SUK;PARK, INN - OK;HONG, HEUNG - KI;BAEK, DONG - WON