TUNGSTEN PLUG MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

The tungsten plug manufacturing method comprises the steps of depositing a barrier, which has a contact hole, on a lower conducting layer; formating a thin glue layer on a structure of a wafer including contact hole; filling the contact hole by depositing a tungsten layer on the glue layer; formating a tungsten plug with an etch back process by keep etching to the depth where the glue layer is exposed after isotropic etching of the contact hole with a SF6/Ar mixture plasma; formating a tungsten nitride layer as a protecting layer on the tungsten plug and removing remaining tungsten materials on the glue layer by isotropic etching with a SF6/Ar/N2 mixture plasma at the same time; removing the tungsten nitride layer on the tungsten plug by Ar sputtering; and formating a metal layer on the entire structure of the wafer; thereby improving the step coverage.