SEMICONDUCTOR MEMORY DEVICE AND THE MANUFACTURING METHOD

摘要

forming a contact hole over a first insulating layer (83); forming a first conducting layer over the insulating layer (83); forming a first epilayer over the first conducting layer; forming a first side wall spacer (89) with a third material on the side wall of the pattern of the second epilayer; patterning the first epilayer and the first conducting layer; forming i-HSG(island-Hemi Spherical Grain) (91) with a second conducting material after removing the second epilayer; forming a second side wall spacer (93') to keep i-HSG from etching and patterning the first epilayer; forming micro pillars inside a cylinder by etching the pattern of the first conducting layer using the pattern of the second epilayer as mask; depositing a dielectric (97) over the whole surface of the wafer after removing the first and the second spacer (89, 93'); depositing a second conducting layer over the dielectric (97).