SEMICONDUCTOR DEVICE HAVING AN INSULATED GATE

摘要

A semiconductor device comprises a semiconductor layer (1) of SiCand an insulating layer (4) thereon for insulating the SiC layer with respect to a metal plate (5) constituting a gate and connectable to a voltage for creating a conducting surface channel at the SiC layer-insulating layer interface. At least the portion of the insulating layer (4) closest to said interface is made of a crystalline material which is substantially lattice-matched to SiC and has substantially the same coefficient of thermal expansion as SiC. The insulating layer (4) comprises AlN as only or as major component of an alloy of Group 3B-nitrids and SIC, with AlBN in one preferred embodiment.