Sputter deposition of uniformly thick layer

摘要

In a process for depositing uniform layer thicknesses in cathodic sputtering units, in which the substrate is moved in a circle past a stationary cathode and in which a rotationally symmetrical deposition speed with a central local minimum is created, the novelty is that (a) the substrate undergoes continuous or discrete rotation; and (b) the ratio between the maximum and the central local minimum of the deposition speed is adjusted to 1.2-1.6, pref. by adjusting the distance between the cathode and the substrate plane. Also claimed is an appts. for carrying out the above process.