| 发明名称 |
Semiconductor structure and manufacturing method thereof |
| 摘要 |
The present invention provides a semiconductor structure, which includes a substrate, at least two gate structures disposed on the substrate, a first recess, disposed in the substrate between two gate structures, the first recess having a U-shaped cross section profile, and a second recess, disposed on the first recess, the second recess having a polygonal shaped cross section profile, and has at least two tips on two sides of the second recess, the first recess and the second recess forming an epitaxial recess. |
| 申请公布号 |
US9419089(B1) |
申请公布日期 |
2016.08.16 |
| 申请号 |
US201514714361 |
申请日期 |
2015.05.18 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Lin Yu-Ying;Chen Kuang-Hsiu;Guo Ted Ming-Lang;Wang Yu-Ren |
| 分类号 |
H01L29/06;H01L29/423;H01L21/3065;H01L21/225;H01L21/283 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A semiconductor structure, comprising:
a substrate, at least two gate structures disposed on the substrate; a first recess disposed in the substrate between two gate structures, wherein the first recess has a U-shaped cross section profile; and a second recess, disposed on the first recess, wherein the second recess has a polygonal shaped cross section profile, and has at least two tips on two sides of the second recess, the first recess and the second recess forming an epitaxial recess. |
| 地址 |
Hsin-Chu TW |
