| 发明名称 |
SILICIDE LAYER FORMING METHOD |
| 摘要 |
forming a metal layer (2) on a silicon layer (3) which is junction region, and the metal layer comprising titanium ; depositing an amorphous silicon layer (5) by sputtering on the metal layer (2); forming a silicide layer (4) by thermal process.
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| 申请公布号 |
KR960008566(B1) |
申请公布日期 |
1996.06.28 |
| 申请号 |
KR19930011751 |
申请日期 |
1993.06.25 |
| 申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
HONG, SANG - KI;MOON, YOUNG - HWA;KO, JAE - WAN;KOO, YOUNG - MO |
| 分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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