HIGH FREQUENCY INDUCTION PLASMA METHOD AND APPARATUS

摘要

A method and apparatus for generating plasmas for chemical vapor deposition, etching, etc., and particularly for the deposition of large-area diamond films, comprising a chamber (10) defined by a base plate (12), canopy (14) and O-ring (16). The sidewalls surrounding the longitudinal axis (20) of the chamber are encircled by an axially-extending array of current-carrying conductors (not shown) that are substantially transverse to the longitudinal axis. A gas is provided to the chamber and exhausted by a port (19). A high-frequency current is produced in the conductors to magnetically induce ionization of the gas in the chamber and form a plasma sheath that surrounds and extends along the longitudinal axis, conforming to the sidewalls of the chamber. A work surface extending in the direction of the longitudinal axis of the chamber is positioned adjacent a sidewall, exposed to the plasma sheath and treated by the plasma.