Transistor und Transistorherstellungsverfahren

摘要

The method comprises forming a trench in a substrate 101, introducing an insulating layer 105 into the lower portion of the trench only, introducing a conductive layer 106 into the upper portion of the trench and on the insulating layer for forming a channel of the transistor, forming a gate oxide layer 108 on the resulting structure, forming a gate electrode 109 on the gate oxide layer, and implanting impurity ions into the substrate to form source/drain regions 110. <IMAGE>