| 摘要 |
<p>A thin film semiconductor device (1) is formed on an insulating substrate (2). The device (1) has a source (3), gate (7) and drain (4), with the gate (7) and either the drain (4) or source (3) being connected together by a semi-insulating layer (12). The semi-insulating layer (12) improves the high voltage breakdown characteristics of the device (1).</p> |
