LASER DIODE WITH AN ION-IMPLANTED REGION

摘要

A laser device and a method of fabrication are disclosed in which the device comprises one or more ion-implanted regions (37, 39) as a means to decrease the occurrence of device failures attributable to dark-line defects. The ion-implanted regions, which are formed between the laser gain cavity and the regions of probable dark-line defect origination, serve to modify the electrical, optical, and mechanical properties of the device lattice structure, thus reducing or eliminating the propagation of dark-line defects emanating from constituent defects or bulk material imperfections which may be present in the device.