Mfg. metallic microstructures integrated in semiconductor plates comprises: (a) providing a semiconductor plate (1) consisting of a single or several monocrystalline layers with structured openings (2) by anisotropic etching; (b) coating the plate surface with a dielectric film (3), at least in the area of each opening; (c) joining the plate (1) with a contact plate (4) having contact pads (5) in the area of each opening (2); and (e) filling the openings (2) at least partially with metal (7) by electrodeposition.
申请公布号
DE19547370(A1)
申请公布日期
1996.06.27
申请号
DE1995147370
申请日期
1995.12.19
申请人
GRAUER, THOMAS, DR., 70192 STUTTGART, DE
发明人
GRAUER, THOMAS, DR., 70192 STUTTGART, DE;RIEGER, ALEXANDER FRANZ ROBERT, 89555 STEINHEIM, DE