| 摘要 |
The present invention is to improve reliability of a semiconductor device. The semiconductor device (1) includes a plurality of wiring layers (5, 7, 9) formed on a semiconductor substrate (1P), a pad (9a) formed on an uppermost wiring layer of the wiring layers (5, 7, 9), a surface protection film (10) which includes an opening on the pad and is made of an inorganic insulating film, a rewiring (12) formed on the surface protection film (10), a pad electrode (13) formed on the rewiring (12), and a wire (20) connected to the pad electrode (13). The rewiring (12) includes a pad electrode mounting portion on which the pad electrode (13) is mounted, a connection portion which is connected to the pad, and an extended wiring portion which connects the pad electrode mounting portion and the connection portion, and the pad electrode mounting portion (13) is in a rectangular shape when viewed from a plane. |
