发明名称 |
FORMING METHOD OF BPSG FILM |
摘要 |
The BPSG (boron phosphosilicate glass) film is prepared by using gas such as 0.04-0.08sccm SiH4, 5.74-6.74sccm O2, 0.2-0.4sccm PH3 and 0.115-0.175sccm B2H6, where the concentration of phosphorus is 10.17-14.17 mol% and that of boron is 4.19-8.19 mol%. The depositing temp. is 405-445 deg.C, and the thickness of BPSG is 4000-6000A.
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申请公布号 |
KR960008516(B1) |
申请公布日期 |
1996.06.26 |
申请号 |
KR19930005470 |
申请日期 |
1993.03.31 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
JUNG, CHANG - WON;LEE, WON - KUN |
分类号 |
H01L21/316;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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