发明名称 FORMING METHOD OF BPSG FILM
摘要 The BPSG (boron phosphosilicate glass) film is prepared by using gas such as 0.04-0.08sccm SiH4, 5.74-6.74sccm O2, 0.2-0.4sccm PH3 and 0.115-0.175sccm B2H6, where the concentration of phosphorus is 10.17-14.17 mol% and that of boron is 4.19-8.19 mol%. The depositing temp. is 405-445 deg.C, and the thickness of BPSG is 4000-6000A.
申请公布号 KR960008516(B1) 申请公布日期 1996.06.26
申请号 KR19930005470 申请日期 1993.03.31
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 JUNG, CHANG - WON;LEE, WON - KUN
分类号 H01L21/316;(IPC1-7):H01L21/316 主分类号 H01L21/316
代理机构 代理人
主权项
地址