| 摘要 |
The protective structure comprises an epitaxial region (38) within the substrate between the power transistor and the control devices. A contact (42) is placed between the epitaxial region and the power transistor and between the epitaxial region (38) and the substrate. An epitaxial region (40), within the substrate, is on the side of the power transistor opposite the control devices. The two epitaxial regions are electrically connected together. Another contact (44) to the substrate, is connected to ground and placed between the power transistor and the epitaxial region (40). |
