发明名称 |
Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth |
摘要 |
Hillocks arise on the films, when compound semiconductor films are grown on an InP wafer having a surface near a (100) orientation. Off-angle wafers have been adopted for a substrate in order to suppress the occurrence of hillocks. The off-angle THETA from a (100) plane is not a sole factor for ruling the generation of hillocks. There is a concealed parameter which determines the generation of hillocks. What induces hillocks on the growing film is the defects on the substrate itself. No hillocks originate on a part of an InP wafer without dislocations. The role of the off-angle THETA of the substrate is preventing the influence of the dislocations from transmitting to the films. A smaller density D of the defects on the substrate allows a smaller off-angle THETA for suppressing the hillocks from arising. A bigger density D of the defects demands a larger off-angle for the substrate so as to forbid the hillocks from originating. An inequality THETA >/= 1 x 10<-><3>D<1/2> is the condition for annihilating hillocks. More precise condition is THETA >/= 1.26 x 10<-><3>D<1/2>. <MATH> |
申请公布号 |
EP0701008(A3) |
申请公布日期 |
1996.06.26 |
申请号 |
EP19950306232 |
申请日期 |
1995.09.06 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LIMITED |
发明人 |
OIDA, KAZUHIKO;NAKAI, RYUSUKE |
分类号 |
C30B25/18;C30B23/02;C30B25/02;C30B29/40;H01L21/205 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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