发明名称 |
Field emission devices employing ultra-fine diamond particle emitters |
摘要 |
<p>This application discloses methods for making electron emitters using commercially available diamond particles treated to enhance their capability for electron emission under extremely low electric fields. Electron emitters comprising ultra-fine (5-10,000 nm) diamond or diamond-coated particles are activated by a hydrogen plasma treatment to produce electron emission current density of at least 0.1 mA/mm<2> at low electric fields below 8 V/ mu m. Emitters are preferably fabricated by plasma activating the ultra-fine diamond or diamond-coated particles, preferably in the nanometer size range, then applying the particles either as a suspension in a solution or as dry particles, with an optional baking process to improve particle adhesion, onto a conducting substrate such as n-type Si or metal. <IMAGE></p> |
申请公布号 |
EP0718864(A1) |
申请公布日期 |
1996.06.26 |
申请号 |
EP19950308758 |
申请日期 |
1995.12.05 |
申请人 |
AT&T CORP. |
发明人 |
JIN, SUNGHO;ZHU, WEI;KOCHANSKI, GREGORY PETER |
分类号 |
H01J31/12;H01J1/304;H01J9/02;H01J23/06;H01J29/04;(IPC1-7):H01J1/30 |
主分类号 |
H01J31/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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