发明名称 Field emission devices employing ultra-fine diamond particle emitters
摘要 <p>This application discloses methods for making electron emitters using commercially available diamond particles treated to enhance their capability for electron emission under extremely low electric fields. Electron emitters comprising ultra-fine (5-10,000 nm) diamond or diamond-coated particles are activated by a hydrogen plasma treatment to produce electron emission current density of at least 0.1 mA/mm&lt;2&gt; at low electric fields below 8 V/ mu m. Emitters are preferably fabricated by plasma activating the ultra-fine diamond or diamond-coated particles, preferably in the nanometer size range, then applying the particles either as a suspension in a solution or as dry particles, with an optional baking process to improve particle adhesion, onto a conducting substrate such as n-type Si or metal. &lt;IMAGE&gt;</p>
申请公布号 EP0718864(A1) 申请公布日期 1996.06.26
申请号 EP19950308758 申请日期 1995.12.05
申请人 AT&T CORP. 发明人 JIN, SUNGHO;ZHU, WEI;KOCHANSKI, GREGORY PETER
分类号 H01J31/12;H01J1/304;H01J9/02;H01J23/06;H01J29/04;(IPC1-7):H01J1/30 主分类号 H01J31/12
代理机构 代理人
主权项
地址