MANUFACTURING METHOD OF MEMORY DEVICE

摘要

forming a first conducting layer (26); forming a first epilayer (28) over the first conducting layer; forming a first pattern (29) which is confined in the unit of cell and is composed of the first epilayer (28); patterning a storage electrode (27) by etching the first conducting layer properly using the first pattern as mask; forming a second pattern (31) by etching the edge of the first pattern; forming a second epilayer; forming a spacer (30) in the side wall of the second pattern and the storage electrode pattern; removing the second pattern; etching the whole wafer anisotropically using the spacer (30) as mask.