SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

The D-RAM capacitor fabricating method comprises the steps of : formating first conductor layer pattern with a certain distance apart on first barrier of a wafer; formating second barrier for protecting the first conducting pattern; formating an attack preventing layer for preventing attacks to second barrier from a cleaning agent; making a contact window for a capacitor formed inside of the attack preventing layer and first & second barriers in first conducting layers; formating a dielectric layer on second conducting layer and the attack preventing layer for preventing abnormal deposition of a dielectric layer on second barrier, and oxidation of first conducting layer during thermal processing, thereby improving the process.