发明名称 Method for manufacturing a cubically integrated circuit arrangement
摘要 A method used in manufacturing a cubically integrated circuit arrangement. A silicon wafer, wherein through pores are produced by electrochemical etching are insulated from the silicon wafer, and are provided with conductive fills, is secured as a carrier plate (24) to a substrate (21) that has components and that is integrated in a cubically integrated circuit arrangement. Terminal pads (25) that are electrically connected to conductive fills and that are arranged on the surface of the carrier plate (24) thereby meet contacts (23) to the components that are arranged at the surface of the substrate (21) adjoining the carrier plate (24) and that are firmly connected thereto.
申请公布号 US5529950(A) 申请公布日期 1996.06.25
申请号 US19950377049 申请日期 1995.01.23
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 HOENLEIN, WOLFGANG;SCHWARZL, SIEGFRIED
分类号 H01L23/12;H01L21/768;H01L21/98;H01L23/52;H01L25/065;(IPC1-7):H01L21/288;H01L21/60 主分类号 H01L23/12
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