发明名称 |
Method for manufacturing a cubically integrated circuit arrangement |
摘要 |
A method used in manufacturing a cubically integrated circuit arrangement. A silicon wafer, wherein through pores are produced by electrochemical etching are insulated from the silicon wafer, and are provided with conductive fills, is secured as a carrier plate (24) to a substrate (21) that has components and that is integrated in a cubically integrated circuit arrangement. Terminal pads (25) that are electrically connected to conductive fills and that are arranged on the surface of the carrier plate (24) thereby meet contacts (23) to the components that are arranged at the surface of the substrate (21) adjoining the carrier plate (24) and that are firmly connected thereto. |
申请公布号 |
US5529950(A) |
申请公布日期 |
1996.06.25 |
申请号 |
US19950377049 |
申请日期 |
1995.01.23 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HOENLEIN, WOLFGANG;SCHWARZL, SIEGFRIED |
分类号 |
H01L23/12;H01L21/768;H01L21/98;H01L23/52;H01L25/065;(IPC1-7):H01L21/288;H01L21/60 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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