| 摘要 |
A plasma processing apparatus includes a chamber provided with a susceptor therein for supporting a wafer. A flat coil antenna is mounted on an outer surface of an insulating wall of the chamber to face the wafer. An RF current is supplied to the coil, thereby generating a plasma in the chamber between the coil and the wafer. A focus ring is provided on the susceptor to surround the wafer, which has a projecting portion projecting toward the coil past the surface of the wafer, and consists of an electrical insulator or a high resistor, for directing the plasma generated between the projecting portion and the coil in a direction substantially parallel to the surface of the wafer.
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