| 摘要 |
PURPOSE: To restrain a wiring layer of laminated structure composed of a metal silicide and a silicon layer and a semiconductor substrate which serves as ground from increasing the contact resistance between the wiring layer and the substrate. CONSTITUTION: Positive resist is applied onto a silicon oxide film 2 on the primary surface of a silicon substrate. The positive resist is subjected to a light exposure treatment through a prescribed reticule and then developed, and the silicon oxide film 2 is etched through the developed positive resist film as a mask to form a contact hole 3. A polycrystalline silicon layer 4 doped with impurities and a silicon oxide film 5 are successively formed covering the contact hole 3. Negative resist is applied onto the silicon oxide film 5 and subjected to a light exposure treatment through a prescribed reticule and developed. The silicon oxide film 5 is etched using the negative resist as a mask so as to be left unremoved only on the contact hole 3. |
