发明名称 |
Method for producing light-emitting diode |
摘要 |
A method for producing a light-emitting diode provided with a pn junction of GaP containing nitrogen on an n-type GaP substrate, includes the steps of: forming an n-type GaP layer on the n-type GaP substrate by epitaxial growth by bringing the n-type GaP substrate into contact with an oversaturated melted Ga; forming an n-type GaP:N layer having a low n-type carrier concentration on the n-type GaP layer by epitaxial growth by bringing the melted Ga into contact with NH3 gas; and forming a p-type GaP:N layer having a carrier concentration almost equal to a carrier concentration of the n-type GaP:N layer on the n-type GaP:N layer.
|
申请公布号 |
US5529938(A) |
申请公布日期 |
1996.06.25 |
申请号 |
US19950450922 |
申请日期 |
1995.05.26 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
UMEDA, HIROSHI;TANAKA, HIROSHI;HARADA, MASAMICHI;ARAI, YASUHIKO |
分类号 |
H01L33/30;(IPC1-7):H01L21/265 |
主分类号 |
H01L33/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|