| 摘要 |
In a semiconductor memory device including a memory cell array, a digit line for receiving read data from a selected one of read-only memory cells of the memory cell array, a sense amplifier for sensing a voltage at the digit line to generate a sense voltage signal, and a comparator for comparing the sense voltage signal with a reference voltage signal to generate an output signal, a presetting circuit and a constant voltage generating circuit are provided to preset the sense voltage signal by receiving an address transition detection signal.
|
