| 摘要 |
<p>PURPOSE: To stabilize the operation of a memory cell under a low voltage while securing reliability of the memory cell micronized for improving a integration degree. CONSTITUTION: An external source voltage VCC is stepped down by a step-down transistor Q1, and the stepped down voltage is made potential of a bit line BIT. Further, the external source voltage VCC is stepped down by the step-down transistor Q5, and the stepped down voltage is made the potential of the bit line BIT bar. Further, the external source voltage VCC is stepped down by the step-down transistor Q3, and the stepped down voltage is made the internal source voltage of the memory cell MC. On the contrary, the external source voltage VCC is applied to gate electrodes of both access transistors A1, A2 directly through word drivers 1, 2 respectively. Thus, data destruction by a noise, etc., is prevented, and a static margin at the time of reading out from the memory cell is enhanced.</p> |
