发明名称 Apparatus and method of manufacturing semiconductor device
摘要 An evaporation chamber for forming fine metal particles is separated from a film formation chamber in which the substrate having a metal film such as a metal column thereon is placed during metal film deposition. The pressure of the film formation chamber is set to be lower than that of the evaporation chamber, and the fine metal particles are sprayed on the substrate by the pressure difference to form the metal column. Therefore, a wiring layer, a connection electrode for connecting the wiring layer to another wiring layer, and the like can easily be formed by a small number of steps.
申请公布号 US5529634(A) 申请公布日期 1996.06.25
申请号 US19950424623 申请日期 1995.04.19
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MIYATA, MASAHIRO;EGAWA, HIDEMITSU;FUKUHARA, JOHTA;TAKEDA, SHINZI;EZAWA, HIROKAZU
分类号 C23C14/04;C23C14/22;H01L21/60;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):C23C16/00 主分类号 C23C14/04
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