| 摘要 |
PURPOSE: To provide a drain terminal with high voltage resistance in both positive and negative directions to a source terminal and to attain a composite type MOSFET by one chip by using a similar process to that of a conventional power MOSFET. CONSTITUTION: The drains of power MOSFETs 10, 11 are mutually connected, the source and gate of the MOSFET 10 are used as the source terminal 0 and gate terminal, 1 of a composite type MOSFET 60 and the source of the MOSFET 11 is used as the drain terminal 2 of the MOSFET 60. When the voltage of the terminal 2 is negative, the MOSFET 11 is turned off by a voltage comparator circuit 50 and a voltage transmitting circuit 51 for suppressing a current flowing from the terminal 2 to the terminal 1 through the circuit 50 and transmitting the voltage of the terminal 1 to the gate of the MOSFET 11 is connected between the terminal 1 and the gate of the MOSFET 11. Voltage resistance in the positive direction can be obtained by the MOSFET 10 and that in the negative direction can be obtained by the MOSFET 11. |
