| 摘要 |
PURPOSE: To enable manufacturing of a CMOS with high reliability by forming a thin layer doped with impurities at high concentration in a part wherein a gate side wall consisting of an oxide film is in contact with a semiconductor substrate, by diffusing impurities from the part into a substrate and by forming a source/drain region of a shallow junction. CONSTITUTION: A 20nm-thick boron glass film 16, for example, is formed along a surface of an Si substrate 10 and a side surface of a gate electrode 15. After an unnecessary part is etched and removed, as Si oxide film 110 about 0.1μm thick is formed all over and a gate side wall 111 is formed by performing on the whole surface reactive ion etching for the Si oxide film 110. Then, a boron glass film 16 is left in a p-MOS formation region alone and a source/drain region 113 with a shallow junction part is formed by solid phase diffusion from the boron gas film 16. Thereby, a source/drain region 113 with a shallow junction part is formed by solid phase diffusion from the boron gas film 16. Thereby, a highly reliable CMOS (complementary MOSFET) can be readily manufactured.
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