MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To form silicide with the same film thickness regardless of a kind of a diffusion layer while maintaining high through-put by using a usual device of a self-aligning structure. CONSTITUTION: Si<+> is injected by 0.8×10<14> cm<-2> all over a silicon substrate 1 at 10keV and a part of an n-type diffusion layer 6 is made an amorphous layer 8. However, an amorphous layer is not formed on a p-type diffusion layer 7 but an Si<+> injection layer 9 wherein Si<+> is injected is formed there.