| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF |
| 摘要 |
PURPOSE: To enhance the insulating film of a semiconductor device in breakdown strength. CONSTITUTION: A Cl-containing CVD silicon oxide film 20 is formed on a silicon substrate 11, and a polysilicon layer 15 is formed thereon. The CVD silicon oxide film 20 is featured by that it is set more than 1×10<18> atoms/cm<3> but lower than 2×10<20> atoms/cm<3> in Cl concentration. As the silicon oxide film 20 is formed on the silicon substrate 11 through a CVD method, BMD contained in the silicon substrate 11 is restrained from diffusing into the silicon oxide film 20, so that the silicon oxide film is prevented from decreasing breakdown strength due to BMD.
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| 申请公布号 |
JPH08167599(A) |
申请公布日期 |
1996.06.25 |
| 申请号 |
JP19940310841 |
申请日期 |
1994.12.14 |
| 申请人 |
TOSHIBA MICROELECTRON CORP;TOSHIBA CORP |
发明人 |
HISATOMI KIYOSHI;ISHIHARA KATSUNORI;MIKATA YUICHI;FUNO SAKAE |
| 分类号 |
H01L21/28;H01L21/31;H01L21/316;H01L21/318;H01L21/8247;H01L29/788;H01L29/792;(IPC1-7):H01L21/31;H01L21/824 |
主分类号 |
H01L21/28 |
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