| 摘要 |
PURPOSE: To provide a semiconductor memory with a small chip area and with a high-speed read. CONSTITUTION: In a DRAM of multi-bit constitution, single end type amplifier driving circuits 231-233 and a double and type amplifier driving circuit 234 are provided corresponding to memory cell blocks B1-B4. Read buses/RBUS 1/RBUS4 are provided one by one corresponding to the amplifier driving circuits 231-234 respectively. Output buffers 251-254 are activated in response to a detection signal/ϕd generated when the operation of a differential amplifier in the amplifier driving circuit 234 is ended.
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