发明名称 CHEMICAL MECHANICAL POLISHING DEVICE
摘要 <p>PURPOSE: To enable a chemical mechanical polishing device to polish the center and periphery part of a substrate uniform in polishing rate by a method wherein abrasive material feeding holes are provided to an abrasive cloth, and abrasive agent is fed through the abrasive agent feeding holes from a polishing table side and discharged through abrasive agent discharge holes to the polishing table side. CONSTITUTION: An abrasive cloth 2 is disposed in tension on the surface of a polishing table 1, and a substrate holder 4 is supported in a rotatable manner confronting the polishing table 1. The treated surface of a substrate 5 held by the substrate holder 4 is pressed against the surface of the polishing table 1 through the intermediary of the abrasive cloth 2. Abrasive agent feed holes 6 are provided to the abrasive cloth 2, and abrasive agent is fed through the abrasive agent feed holes 6 from the polishing table 1 side. Furthermore, abrasive agent discharge holes 8 are also provided to the abrasive cloth 2 corresponding to the abrasive agent feed holes 6, and abrasive agent is discharged through the abrasive agent discharge holes 8 to the polishing table 1 side. By this setup, abrasive agent is restrained from spreading from the center to peripheral part of the substrate so as to keep the treated surface of the substrate uniform in polishing rate.</p>
申请公布号 JPH08167585(A) 申请公布日期 1996.06.25
申请号 JP19940307261 申请日期 1994.12.12
申请人 SONY CORP 发明人 SHINOHARA KEIJI
分类号 H01L21/304;B24B37/00;(IPC1-7):H01L21/304 主分类号 H01L21/304
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