| 摘要 |
PURPOSE: To provide a secondary ion mass spectrometric analysis method whereby the distribution of impurities in a depthwise direction within an objective analysis area can be measured without being influenced by films and elements on the analysis area and the production of a sample. CONSTITUTION: A sample is obtained by depositing on a silicon substrate 1 a polysilicon 2 having arsenic doped therein, a silicon dioxide 3, a silicon nitride 4 and an aluminum 5. After the sample is thinned by a mechanical grinding method from the side of the silicon substrate 1, converging ion beams are cast by a converging ion beam device 7 perpendicularly to a side face 6' of an area 6 at an end part of the sample at the side of the silicon substrate 1 thereby to dig the sample. The sample of the area 6 is turned to a thickness of 1μm. Cs<+> primary ion beams are cast by an SIMS device to the area 6 of the processed sample, and arsenic As secondary ions generated by the sputtering are detected. After the side face of a point to be analyzed at the side of the substrate is dug and turned thin by the converging ion beam method as above, the area is measured by a secondary ion mass spectroscope. |
