| 摘要 |
PURPOSE: To simplify manufacturing process and reduce manufacturing cost by forming a capacitor insulating film of a trench-type capacitor and a gate insulating film from the same insulating film in the same step when a DRAM cell having the trench-type capacitor is manufactured, and by forming a capacitor plate and gate wiring from the same electrically conductive film in the same step. CONSTITUTION: This manufacturing process comprises steps of, forming a trench in a semiconductor substrate, forming a storage node 5 of a capacitor in an inner surface of the trench, forming a first insulating film 6 on the whole surface of the semiconductor substrate after the formation of the storage node, removing the first insulating film except the storage node region, and forming a second insulating film 7 on the whole surface of the semiconductor substrate thereafter. Further, it comprises steps of, forming a first electrically conductive film 14 on the second insulating film, and forming a plate of the capacitor and gate wiring of 13 of an MOS transistor by patterning the first electrically conductive film. |
