METHOD FOR COATING OXIDE OR COMPOUND OXIDE SEMICONDUCTOR SUBSTRATE WITH SILICEOUS THIN FILM

摘要

PURPOSE: To provide a method for forming a uniform siliceous thin film on the surface of an oxide or a compound oxide semiconductor substrate at a low temperature. CONSTITUTION: This method for coating an oxide or a compound oxide semiconductor substrate with a siliceous thin film comprises the first step for adsorbing silane compound molecules and/or siloxane compound molecules on the surface of the oxide or compound semiconductor substrate and the second step for irradiating the surface of the oxide or compound oxide semiconductor substrate with light after or simultaneously with the first step.