发明名称 |
Microwave plasma processing system |
摘要 |
A microwave plasma processing system has heating means for heating the wall of a reaction chamber, and an adhesion preventing member in which a cylinder disposed so as to be in contact with the inner face of a wall of the reaction chamber and a microwave reflecting plate having a gas discharge hole are integrally formed. A microwave plasma processing system has heating means for heating the wall of a reaction chamber, and a microwave reflecting plate which is attached to the inner face of a wall of the reaction chamber and which has a gas discharge hole.
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申请公布号 |
US5529632(A) |
申请公布日期 |
1996.06.25 |
申请号 |
US19950490087 |
申请日期 |
1995.06.13 |
申请人 |
SUMITOMO METAL INDUSTRIES, LTD.;NEC CORPORATION |
发明人 |
KATAYAMA, KATSUO;KOMACHI, KYOICHI;MABUCHI, HIROSHI;AKIMOTO, TAKESHI |
分类号 |
H05H1/46;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):C23C16/00 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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