发明名称 Microwave plasma processing system
摘要 A microwave plasma processing system has heating means for heating the wall of a reaction chamber, and an adhesion preventing member in which a cylinder disposed so as to be in contact with the inner face of a wall of the reaction chamber and a microwave reflecting plate having a gas discharge hole are integrally formed. A microwave plasma processing system has heating means for heating the wall of a reaction chamber, and a microwave reflecting plate which is attached to the inner face of a wall of the reaction chamber and which has a gas discharge hole.
申请公布号 US5529632(A) 申请公布日期 1996.06.25
申请号 US19950490087 申请日期 1995.06.13
申请人 SUMITOMO METAL INDUSTRIES, LTD.;NEC CORPORATION 发明人 KATAYAMA, KATSUO;KOMACHI, KYOICHI;MABUCHI, HIROSHI;AKIMOTO, TAKESHI
分类号 H05H1/46;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):C23C16/00 主分类号 H05H1/46
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