发明名称 SEMICONDUCTOR DEVICE, MANUFACTURE THEREOF, MEMORY CORE CHIP AND MEMORY PERIPHERAL CIRCUIT CHIP
摘要 PURPOSE: To provide a low-cost semiconductor device which is operated at a low voltage with low power consumption. CONSTITUTION: A semiconductor device comprises a plurality of circuit blocks having a first circuit block (DRAM core) and a second circuit block (DRAM peripheral circuit) having different block parameters such as design rules, wherein the first circuit block is formed on a first semiconductor chip (DRAM core chip)101, the second circuit block is formed on a second semiconductor chip 102, and electrically connected to the first circuit block. As a result, the semiconductor chips can be manufactured at low cost.
申请公布号 JPH08167703(A) 申请公布日期 1996.06.25
申请号 JP19950263382 申请日期 1995.10.11
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MORI TOSHIKI;NAKAO ICHIRO;FUJITA TSUTOMU;SEGAWA REIJI
分类号 G11C11/401;H01L21/8242;H01L25/04;H01L25/18;H01L27/108 主分类号 G11C11/401
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