发明名称 |
SEMICONDUCTOR DEVICE, MANUFACTURE THEREOF, MEMORY CORE CHIP AND MEMORY PERIPHERAL CIRCUIT CHIP |
摘要 |
PURPOSE: To provide a low-cost semiconductor device which is operated at a low voltage with low power consumption. CONSTITUTION: A semiconductor device comprises a plurality of circuit blocks having a first circuit block (DRAM core) and a second circuit block (DRAM peripheral circuit) having different block parameters such as design rules, wherein the first circuit block is formed on a first semiconductor chip (DRAM core chip)101, the second circuit block is formed on a second semiconductor chip 102, and electrically connected to the first circuit block. As a result, the semiconductor chips can be manufactured at low cost. |
申请公布号 |
JPH08167703(A) |
申请公布日期 |
1996.06.25 |
申请号 |
JP19950263382 |
申请日期 |
1995.10.11 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
MORI TOSHIKI;NAKAO ICHIRO;FUJITA TSUTOMU;SEGAWA REIJI |
分类号 |
G11C11/401;H01L21/8242;H01L25/04;H01L25/18;H01L27/108 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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